List of Publications & Presenttaions (2015-1990)

Summary of Publications, Patents and overall Scientific Output

•    ~ 80 published papers and articles, cited over 249 times (Google Scholar); h-index: 10 (>229 citations)
•    40 patents filed (and most granted) with "Koutsaroff" or 「掘露伊保⿓」as inventor
•    Patent citations: 50-66 [database dependent] cited patents
•    Results presented at about 60 international conferences, symposia, and workshops
•    Invited and keynote lectures presented at 12 International conferences and symposia
•    Invited review article on "Review on ferroelectric thin film devices: fundamental aspects and device integration challenges" co-authored with Prof. J.S. Cross published in 2010
•    Invited to present talks/seminars at 20 Universities, Research institutes and Established Electronic Industrial R&D Centers across the World.
•    American Physical Society (APS) regular referee for JAP, APL and APL Materials with more than 40 papers for review invitations
•    Anion-Controlled New Inorganic Materials (ANIM) Symposia founder, ACS Crystal Growth & Design Special Issue Editor
•    IEEE, ACS, MRS, E-MRS, ASM Intern., ECS, member

Special Assignments

• Guest Editor Crystal Growth & Design (Impact factor 4.891), ACS
Special Virtual Issue on Anion-Controlled New Inorganic Materials (ANIM1), “Crystal Growth & Design” journal (Impact Factor of 4.689 in 2012), American Chemical Society (ACS) publications.

• Co-Editor Ferroelectric Thin Films XII Symposium, MRS
Proceedings of Ferroelectric Thin Films XII Symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A. Cambridge University Press (ISBN 978-1-107-40935-4)

79 Koutsaroff, I.P., Keynote Invited Talk, " Anion-control Approach for Tuning of Dielectric Properties of Mixed-anion Perovskite Materials", BIT's 1st Annual World Congress of Smart Materials-2015 (WCSM-2015), Busan, Republic of Korea on March 23-25, 2015 Session 702: Smart Materials for Energy Storage and Energy Saving (Keynote Invited Talk)

78 Koutsaroff, I.P., "Recent Progress in Aliovalent Anion-substituted Perovskite Thin Film Dielectric Materials: Nanoscale Characterization of ANIM Materials and their functionalities:, E-MRS Spring 2015 Symposium GG: Advances and enhanced functionalities of Anion-controlled New Inorganic Materials (ANIM2), 2nd International Symposium for Anion-Controlled New Inorganic Materials, Lille, France, May 11-15 2015 (Invited Talk)

77 Koutsaroff, I.P. and A. Fuertes (Editors), A., Introduction/Preface, Anion-Controlled New Inorganic Materials, Special Virtual Issue, American Chemical Society, Crystal Growth & Design, Volume VI, Issue 13, December 31, 2014, An Introduction [Proceedings of Symposium T of E-MRS Spring 2013 entitled Advances and Enhanced Functionalities of Anion-Controlled New Inorganic Materials (ANIM1)]

76 Anaïs David, Samuel Guérin, Brian E. Hayden, Robert Noble, Jean-Philippe Soulié, Christopher Vian, Ivoyl P. Koutsaroff , Shin’ichi Higai, Nobuhiko Tanaka, Takehiro Konoike, Akira Ando, Hiroshi Takagi, Teiji Yamamoto, Tadao Fukura, and Hideharu Ieki “High-Throughput Synthesis and Characterization of (BaxSr1–x)1+yTi1–yO3−δ and (BaxSr1–x)1+yTi1–yO3–zNz Perovskite Thin Films”, Cryst. Growth Des., 14 (2), pp 523–532 (2014) DOI: 10.1021/cg401259r [Crystal Growth & Design IMpcat Factor 4.891]

Database: Web of Science; SciFinder; Engineering Village (Compendex); Scopus
Times cited (SciFinder): 3 (h3) [most recently cited by Nature Chemistry 2015 7, 1017 [Impact Factor 25.325]

75 Koutsaroff, I.P., Keynote Lecture "Total Quality and Risk Management in Microelectronic Production: Recent Developments of Advanced Process Control (APC) Techniques and toward Automatic Virtual Metrology (AVM) Systems", Innovations in Information and Communication Science and Technology (IICST 2013) — Third Postgraduate Consortium International Workshop "The Digital Dimensions of Social Evolution", Tomsk State Univresity of Control Stems and Radioelectronics (TUSUR), Tomsk, September 2-5, 2013 (Keynote Talk)

74 Koutsaroff, I.P., “Nanoregion Anion-Substituted Homocomposite-type New Thin Film Dielectric Materials and Their Applications for Tunable Microwave Devices and Frequency Agile Reconfigurable RF Front-End” BIT's 2nd Annual World Congress of Advanced Materials-2013 (WCAM 2013), June 5-7, 2013, Suzhou, China (Keynote Talk)

73 Koutsaroff, I.P., Shin’ichi Higai, Naoki Iwaji, Shoichiro Suzuki, Atsushi Honda, Nobuhiko Tanaka, Takehiro Konoike, Akira Ando, Karun Malhotra, Hiroshi Takagi, Hideharu Ieki, “RF Sputtered Anion-controlled Perovskites Materials: Paraelectricity Enhancement in Alkaline Earth Titanium Oxynitride Perovskite Thin Film Homocomposites with N-substituted Clusters”, E-MRS Spring 2013 Symposium T: Advances and enhanced functionalities of anion-controlled new inorganic materials
(1st International Symposium for Anion-Controlled New Inorganic Materials (ANIM1), Strasbourg, France, from May 27−30, 2013

72 Anaïs David, Samuel Guerin, Brian E. Hayden, Robert Noble, Jean-Philippe Soulié, Ivoyl P. Koutsaroff, Shin’ichi Higai, Nobuhiko Tanaka, Takehiro Konoike, Akira Ando, Hiroshi Takagi and Hideharu Ieki, “High-Throughput Synthesis and Characterisation of (BaxSr1-x)yTi1-yO3 and (BaxSr1-x)yTi1-yO3-zNz Perovskite Thin Films”, E-MRS Spring 2013 Symposium T: Advances and enhanced functionalities of anion-controlled new inorganic materials, (ANIM1), Strasbourg, France, from May 27−30, 2013

71 Hideki Hirano, Tetsuya Kimura, Ivoyl P Koutsaroff, Michio Kadota, Ken-ya Hashimoto, Masayoshi Esashi and Shuji Tanaka, "Integration of BST varactors with surface acoustic wave device by film transfer technology for tunable RF filters", J. Micromech. Microeng. 23 (2013) 025005

70 Yukihiro Hayase, Ivoyl P. Koutsaroff, Masashi Inoguchi, Shin'ichi Higai "PDF Analysis of Oxynitride Perovskites", SPring-8 SACLA Research Reports (ISSN 2187-6886), Volume1 No.3 Published 10-December 2013 / SPring-8 Document D2013-016 (Report No.2011B1194 ) 隼瀬幸浩, 掘露伊保龍, 猪口真志, 檜貝信一窒化酸化物ペロブスカイトのPDF解析 SPring -8/SACLA利用研究成果集

68 I.P. Koutsaroff, Shin'ichi Higai, Akira Ando, Hiroshi Takagi, and Hideharu Ieki, "Experimental Characterization And Theoretical Analysis Of Highly Tunable Paraelectric Perovskite Thin Films", Invited Presentation, Nov. 15（Monday), 16:15-18:00, Room: 1004, The 3rd International Congress on Ceramics (ICC3), Symposium 6 (Advances in Electro Ceramics), November 14-18, 2010, Osaka, Japan

67 J.S. Cross and I P. Koutsaroff, "Review on ferroelectric thin film devices: fundamental aspects and device integration challenges" [Invited special tutorial review article, 「特別解説」], Taikabutsu Refractories [ 耐火物誌, Taikabutsu (Journal of the Technical Association of Refractories), Japan (Nippon)], Vol. 62 (No.4, April), pp.162-173 (2010). ISSN 0039-8993

66 Ito, S., T. Yamada, K. Takahashi, S. Okamoto, T. Kamo, H. Funakubo, I. Koutsaroff, M. Zelner, and A. Cervin-Lawry, “Effect of bottom electrode on dielectric property of sputtered-(Ba,Sr)TiO3 films”, J.Appl. Phys. 105 061606 (2009) .　doi:10.1063/1.3058998

65 I.P. Koutsaroff, K. Otsuka, Y. Takeshima and Y.Sakabe, “Isovalent and Aliovalent co-substituted Perovskite-type Alkaline Earth Metal Titanate Dielectric Thin Films”, Sixth International Conference of the Chemical Societies of the South-Eastern European Countries　(ICOSECS-6), 10−14 September 2008, Sofia, Bulgaria, 3-O1

64 H.Funakubo, S.Ito, K.Takahshi, S.Okamoto, T.Kamo, T.Yamada, I.Koutsaroff, M.Zelner, and A.Cerwin-Lawry, “Effect of Bottom Electrode on Dielectric Property of Sputtered-(Ba,Sr)TiO₃ Films”, 20th International Symposium on Integrated Ferroelectrics (ISIF 2008), Matrix Building, Biopolis, Singapore, Jun. 9-12, 2008, 7B-378-C

63 Ito, S. and H. Funakubo, I. P. Koutsaroff, M. Zelner, and A. Cervin-Lawry, “Effect of the thermal expansion matching on the dielectric tunability of (100)-one-axis-oriented (Ba_0.5Sr_0.5)TiO₃ thin films, Appl. Phys. Lett. 90, 142910 (2007); doi:10.1063/1.2719621

62 Koutsaroff I.P., Vandermeulen, M., Cervin-Lawry A., Patel A.J., “Multi-Level Thin Film Capacitor On A Ceramic Substrate And Method Of Manufacturing The Same”, US Patent and Trademark Office,　US 7224040 May 29, 2007

61 S. Ito, H. Funakubo, I. P. Koutsaroff, M. Zelner, and A. Cervin-Lawry　Effect of the Strain from the Substrate on Tunability of (100) One-axis Oriented (Ba_0.5Sr_0.5)TiO₃Thin Films, 29B-TF5-O, The 16th International Symposium on the Application of Ferroelectrics (XVI ISAF 2007), Nara city,
Japan, May 27-31, 2007, pp. 198-201,　DOI: 10.1109/ISAF.2007.4393212

60 Kozyrev A., A.Gagarin, A.Ivanov, T.Samoilova, O.Soldatenkov, A.Tumarkin,, M.Zelner, I.P.Koutsaroff, T.A.Bernacki, A.Cervin-Lawry, “Nonlinear Response of BaxSr1-xTiO3 Parallel-Plate Capacitors To Microwave Power”, 3-3-C, The 18th International Symposium on Integrated Ferroelectrics (ISIF 2006), ISIF 2006, April 23-27, 2006 Honolulu, Hawaii, (Extended Abstract, 3-3-C)

59 Cervin-Lawry; Andrew; Capanu; Mircea; Koutsaroff; Ivoyl P.; (Yasu, JP); Zelner; Marina; Bernacki; Thomas A.、Low loss thin film capacitor and methods of manufacturing the same, US Patent and Trademark Office, US20060274476 A1, December 7, 2006

58 伊藤信一, 掘露伊保龍, 舟窪浩. (100) 一軸配向した(Ba0.5Sr0.5)TiO3 膜のチューナビリテーに及ぼす基板からの歪の効果, 2006年秋季第67回応用物理学会学術講演会, 2006年秋季第67回応用物理学会学術講演会, Vol. 30a-V-7, pp. P.511., Aug. 2006 2006年8月29日～9月1日、立命館大学びわこ・くさつキャンパス（滋賀県草津市）30a-V-7、P.511.

57 伊藤信一,　高橋健治,　掘露伊保龍,　舟窪　浩, 「SrRuO₃バッファにより(111)方向に配向制御された(Ba0.5,Sr0.5)TiO3薄膜の特性評価」、2005年秋季第66回応用物理学会学術講演会,　 2005年9月7日～9月11日, 徳島大学, 7a-L-7, p.459

56 Kozyrev, A.; Ivanov, A.; Samoilova, T.; Soldatenkov, O.; Zelner, M.; Koutsaroff, I.P.; Bernacki, T.A.; Cervin-Lawry, Nonlinear response of Ba/sub x/Sr/sub 1 - x/TiO/sub 3/ planar and parallel-plate capacitors to microwave power: comparative study of power handling capability, Microwave Conference, 2005 European, Volume 2, Issue , 4-6 Oct. 2005 Page(s): 3 pp. - DOI: 10.1109/EUMC.2005.1610202

48 Ito S., Takahashi K., Okamoto S., Koutsaroff I.P., Cervin-Lawry A., Funakubo H., "Orientation dependence of epitaxial and one-axis-oriented (Ba0.5Sr0.5)TiO3 films prepared by RF magnetron sputtering", Jpn. J. Appl. Phys., Vol. 44, pp. 6881-6884 (2005)

47 Ito S., Takahashi K., Okamoto S., Koutsaroff I.P., and Funakubo H., "Local Epitaxial Growth of (111)-oriented (Ba,Sr)TiO₃ films and their properties", The 52th Spring Meeting of the Japan Society of Applied Physics, March 29-April 1, 2005, Saitama University, 春季第52回応用物理学関係連
合講演会 3月29日～4月1日埼玉大学“ローカルエピタキシャル成長した(111)配向(Ba,Sr)TiO3薄膜の作製と評価”

46 Ito S., Takahashi K., Okamoto S., Koutsaroff I.P., Cervin-Lawry A., Sakai J. and Funakubo H., "Dielectric property of BST films prepared on SrRuO₃/Pt hybrid electrode", 8-9-C, The 17th International Symposium on Integrated Ferroelectrics (ISIF 2005), April 17-20, 2005, Shanghai, China, Integrated Ferroelectrics, Vol. 77, pp. 3–11, (2005)

45 Koutsaroff I.P., M. Zelner, T. Bernacki, and A. Cervin-Lawry, "High Frequency Performance of (Ba,Sr)TiO₃ Thin Film Devices: Assessment of Their Suitability for RF Front-end and Other Microwave Applications", Materials and Manufacturing Ontario & Emerging Materials Knowledge (EMK) Workshop, EMK Workshop on Ferroelectric crystals, thin films and their applications, March 7th, 2005, McMaster University (invited).

44 Koutsaroff I.P., Vandermeulen, M., Cervin-Lawry A., Patel A.J., “Multi-Level Thin Film Capacitor On A Ceramic Substrate And Method Of Manufacturing The Same”, US Patent and Trademark Office, US20050117272 A1, June 2, 2005 (see also US 7224040 May 29, 2007)

42 Koutsaroff I.P., Bernacki T., Zelner M., Cervin-Lawry A., Jimbo T., and Suu K., "Effects of RF Sputtering Conditions on Tunability Enhancement of Ba_0.7Sr_0.3TiO₃-Based Thin Film High-Frequency Capacitors", 3^rd International Conference on Microwave Materials and their Applications (MMA2004), October 25-28, 2004, Inuyama, Japan (extended abstract).

41 Koutsaroff I.P., Bernacki T., Zelner M., Cervin-Lawry A., Jimbo T., and Suu K., "Characterization of Thin Film Decoupling and High-Frequency (Ba,Sr)TiO₃ Capacitors on Al₂O₃ Ceramic Substrates", Jpn. J. Appl. Phys., Vol. 43, pp.6740-6745 (2004).

40 Koutsaroff I.P., Bernacki T.A., Zelner M., Woo P., Cervin_Lawry A., Jimbo T., and Suu K., "Effects of Deposition Conditions on the Tunability of (Ba,Sr)TiO₃ – based Thin Films High-Frequency Capacitors", (Ｂａ，Ｓｒ)ＴｉＯ３薄膜を用いた高周波コンデンサにおけるチューナビリティの成膜条件依存性17th Fall Meeting of The Ceramic Society of Japan, Sept. 17-19, 2004, Japan Advanced Institute of Science and Technology (JAIST), Kanazawa, Ishikawa Prefecture, p. 77 (2004) (extended abstract, invited).日本セラミックス協会秋季シンポジウム講演予稿集 2007

38 Koutsaroff I.P., Bernacki T.A., Zelner M., Woo P., Cervin_Lawry A., Patel A., Kassam A., Oh J., Capanu M., Jimbo T., and Suu K., “Decoupling and High-Frequency (Ba,Sr)TiO₃ Capacitors on Ceramic Substrates: Dielectric Properties and Device Integration”, 16th International Symposium on Integrated Ferroelectrics (ISIF), Apr. 5-8 2004, Gyeongju, Korea, 4-13-I (extended abstract, invited).

37 Capanu M., Cervin-Lawry A., Patel A., Koutsaroff I., Woo P., Wu L., Oh J., Obeng J., McClelland B., “Temperature dependence of biaxial modulus and thermal expansion coefficient of thin films using wafer curvature method”, Materials Research Society, Symposium Proceeding, Vol.795, Thin Films-Stresses and Mechanical Properties X, Editors: Corcoran S.G., Joo Y.C., Moody N.R., Suo Z., pp.399-404 (2004).

35 Koutsaroff I.P., Zelner M., Kassam A., McNeil L., Woo P., Bernacki T., Cervin-Lawry A., and Patel A., “Multilayer BST Capacitors Fabricated on Glazed Alumina Substrates”, 15th International Symposium on Integrated Ferroelectrics (ISIF), Feb. 2003, Colorado Springs, CO, 3.2.6-C/I (extended abstract, invited).

33 Koutsaroff I.P., Zelner M., Woo P., McNeil L., Buchbinder M., Cervin-Lawry A. "Oxidized titanium as a bottom electrode adhesion layer for the multilayer (Ba,Sr)TiO₃ capacitors", 14th International Symposium on Integrated Ferroelectrics/13th IEEE Int Symposium on the Applications of Ferroelectrics/19th Meeting on Ferroelectric Materials and their Applications, May 28-Jun 01, 2002, Integrated Ferrolectrics, Vol. 45, pp.97-103 (2002)

30 Koutzarov I.P., Fave A., Reddy C.V., Okumura H. and Yoshida S., "A Novel Surface Perparation Scheme for Non-Alloyed Ohmic Contacts Formation on Highly-Resistive GaN", Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, Materials Research Society, April 13 - 15, 1998, San Francisco, CA.

29 Fave A. (presenting author), Koutzarov I.P.(contributing author)., Tada K., Okumura H., Chichibu S., Nakanishi H. and Yoshida S., “Hall-effect studies of GaN epilayers grown by RF plasma assisted MBE”, The 45th Spring Meeting of the Japan Society of Applied Physics, March 28-30 1998.

28 A. Fave，I.P. Koutzarov，多田健司，K. Balakrishnan，奥村元，秩父重英，中西久幸，吉田貞史，平成10年度春季第45回応用物理学関係連合講演会講演予稿集（1998），"サファイア上RF- ＭＢＥ成長GaN エピ膜のホール特性".

27 Henkel T., Tanaka Y., Kobayashi N., Koutzarov I., Okumura H., Yoshida S., Ohshima T. “Scandium and Gallium implantation doping of silicon carbide”, Wide-Bandgap Semiconductors for High Power, High Frequency and High Temperature, Materials Research Society, Symposium Proceeding, Vol. 512, Editors: DenBaars S, Palmour J, Shur M, Spencer M , 1998, pp. 163-168.

23 Edirisinghe C.H., I.P. Koutzarov. H. E. Ruda, L. Z. Jedral, M. Boudreau, M. Boumerzoug, P. Mascher, A. Moore, "Long term PL enhancement from electron cyclotron resonance plasma enhanced chemical vapour deposition of sulphur passivated Al_xGai_1-xAs", (October 1996, unpublished manuscript).

20 Edirisinghe C., Ruda H.E., Koutzarov I. ,Liu Q., Jedral L., Boudreau, Boumerzoug M., Brown J., Mascher P., Moore A., Henderson R., “Passivatioin Studies on AlGaAs Surfaces Suitable for High Power Laser Development”, Defect and Impurity Engineered Semiconductors and Devices, 1995 MRS Spring Meeting, April 17-21, 1995, Symposium Proceeding, Vol. 378, Editors: Ashok S., Chevallier J., Akasaki I., Johnson N.M., Sopori B.L., 1995, pp.1007-1012.

18 Budiman R.A., Mandelis A., Koutzarov I.P., Ruda H.E., Shen J.,”Noncontact photothermal radiometric deep-level transient spectroscopy of undoped semi-insulating GaAs”, 9th International Conference on Photoacoustic and Photothermal Phenomena (ICPPP), Jun 27-30, 1996, Progress in Natural Science, Vol. 6, pp. S494-S497, Suppl. S December 1996.

16 Busse G., Couturier J.P., Koutzarov I.P., Maldague Z., Mandelis A., Marinetti S., Ruda H.E., and Shen J., "Possible Applications of Pulse Phase Thermography", Progress in Natural Science, Vol. 6, 1996, pp. S80-S82.

15 R. Turan, I.P. Koutzarov. and D.D. Perovic, "FE-SEM Imaging of Semiconductor Quantum Wells and Doping Distributions", (intended for Appl. Phys. Lett., unpublished). Partial data published by R. Turan, D. D. Perovic, and D. C. Houghton, ”Mapping electrically active dopant profiles by field-emission scanning electron microscopy”, Appl. Phys. Lett., 69 (11), 9 Sept 1996, pp. 1593-1595).

14 R. Turan, I.P. Koutzarov. and D.D. Perovic, "FE-SEM Imaging of Semiconductor Quantum Wells and Doping Distributions", Scanning Microscopy International, Bathesda, Meryland (May 1996).

13 Koutzarov, I.P., C.H. Edirisinghe, L. Z. Jedral, H. E. Ruda, Q. Liu, J. Guo-Ping, H. Xia, W.N. Lenard and L. Rodriguez-Fernandez, "Orientation dependence for surface passivation of semi-insulating GaAs", MRS Symposium Proceedings "Compound Semiconductor Electronics and Photonics", Vol. 421 (Eds.: Shul R.J., Pearton S.J., Ren F., Wu C.S.), April 8-10, 1996, San Francisco, CA, p.93-98.

12 Q. Liu, H.E. Ruda, I.P. Koutzarov. L.Z. Jedral and G.M. Chen, "Role of Deep Level Trapping on Surface Photovoltage in High-resistivity GaAs", MRS Symposium Proceedings "Thin Films for Photovoltaic and Related Device Applications", vol. 426, April 8-12, 1996, San Francisco, CA, pp. 569-574.

11 Z.H. Lu, F. Chatenoud, M.J. Graham, H.M. Ruda, I.P. Koutzarov. Q. Liu, K. Mitchell, I.G. Hill and A.B. McLean, "Ideal Passivation of GaAs(l 11)A surface by Cl termination", in 15th Canadian Conference on Surf ace Science (Surface Canada'95): Semiconductors and Nano-Surfaces, May 25-27, 1995, University of Waterloo, Eds. K.T. Leung, S.G. Davison and W.-K. Liu.

10 M. Boudreau, J. Brown, P. Mascher, H.E. Ruda, C. Edirisinghe. I.P. Koutzarov. Q. Liu, A. Moore, and R. Henderson, "Fabrication of Interference Filters for Reflectance Control of AlGaAs/GaAs Laser Facets", presented at the 2nd Graduate Student Opto-electronic Semiconductor Conference on Materials, Devices and Applications, McMaster University, Hamilton, Ontario, Canada, May 1995.

9 Koutzarov, I.P., H.E. Ruda, C.H. Edirisinghe, Q. Liu, J.Z. Jedral (UofT), A. Moore, R. Henderson [EG&G Canada], M. Boudrau, M. Boumerzoug and P. Mascher [McMaster U.] "Optical characterization of Passivation for High Power Al_xGa_1-xAs-based Lasers", SPIE's International Symposium on Photonics West'95: "Laser Diodes and Applications", vol. 2382 (Eds.: KJ. Linden and P.R. Akkapeddi), 4-10 February 1995, San Jose, CA, pp. 42-48.

8 Liu, Q., H.E. Ruda, L.Z. Jedral, I.P. Koutzarov. and C.H. Edirisinghe, "Control of Deep Levels Restoration in Thermally-Quenched Semi-Insulating GaAs Using Capless Laser Processing", SPIE's International Symposium on Photonics West'95: "Laser-Induced Thin-Film Processing", Vol. 2403, (Ed.: J.J. Dubowski) 4-10 February 1995, San Jose, CA, pp.462-466.

7 Koutzarov, I.P., H.E. Ruda, Z.G. Wang, and D. Mo, "Photoelectrical Studies of Super Band-gap Optically Induced recovery of EL2 in Semi-Insulating GaAs", Proc. of 8th Int. Conf. on Semi-Insulating III-V Materials, (Ed.: M. Godlewski) June 6-10, 1994, Warsaw, Poland (World Scientific Publishing Co. Singapore), pp. 213-217.

6 Koutzarov, I.P., Z.G. Wang, D. Mo, and H.E. Ruda, "About light-induced populational changes of hole traps after EL2 -->EL2* transformation in LEG Semi-Insulating GaAs", (unpublished manuscript, 20 p.).

5 Xu, B., Z.G. Wang, I.P. Koutzarov. X.Q. Yang, H. Sun, S.K. Wan, and L.Y. Lin, "A new explanation of the EPC phenomenon in the EL2 Photocurrent quenching", Chinese Journal of Semiconductors, vol.16, 1995 (In Chinese) (6 p.).

4 Koutzarov, I.P., Z.G. Wang, B. Xu, and D. Mo, "Some properties of EL2 related metastable defects in SI LEC GaAs", 7th Int. Conf. in Semi-Insulating III-V Materials, April 21-24, 1992, Ixtapa, Mexico, Eds. C.J. Miner, B. Ford and E.R. Weber (IOP Publ. Ltd.: Bristol, 1993).

3 Koutzarov, I.P., Z.G. Wang, Q.W. Liao, B. Xu, and D. Mo, "Relevance of the metastabilization accessibility of EL2 defect to the optically induced recovery and enhancement of p-type PC state in LEC SI GaAs", 7th Int. School on Condensed Matter Physics: "Electronic and Optoelectronic Materials for the 21st Century", Sept. 19-26, 1992, Varna, Bulgaria, Ed. by J.M. Marshal and N. Kirov

2 Koutzarov, I.P., P.S. Gladkov, and K.B. Ozanyan, "Kinetics of photoluminescence conditioned by intracenter transitions of Fe-center in SI-InP:Fe", Proc. of 4th Asia Pacific Physics Conference, August 13-17, 1990, Seoul, Korea Vol. 1 & 2 (Eds.: Ahn, S.H., Choh., S.H., Cheon I.T., and Lee C.), pp 1283-1286 (World Scientific: Singapore 1991).

1 Koutzarov, I.P., P.S. Gladkov and K.B. Ozanyan, International Conference on Luminescence, July 16-20, 1990, Lisbon, Portugal (extended abstract).

Cites	Rank	Publication Year	Authors	Title	Publication or Patent	Publisher Link	Journal Impact Factor
h43	1	1995	Z.H. Lu, F. Chatenoud, M.J. Graham, H.M. Ruda, I.P. Koutzarov. Q. Liu, K. Mitchell and A.B. McLean	Passivation of GaAs (111)A surface by Cl termination	Applied Physics Letters 67 (5), 670	http://dx.doi.org/10.1063/1.115198	3.569
h38	2	2007	Ito, S. and H. Funakubo, I. P. Koutsaroff, M. Zelner, and A. Cervin-Lawry	Effect of the thermal expansion matching on the dielectric tunability of (100)-one-axis-oriented (Ba0.5Sr0.5)TiO3 thin films	Applied Physics Letters 90 (14), 142910	http://dx.doi.org/10.1063/1.2719621	3.569
h32	3	2007	I. P. Koutsaroff, M. Vandermeulen, A. Cervin-Lawry, and A. J. Patel	Multi-level thin film capacitor on a ceramic substrate	WO/2005/053026	https://patentscope.wipo.int/search/docservicepdf_pct/id00000001947004/PAMPH/WO2005053026.pdf?download
h24	4	2005	Ito S., Takahashi K., Okamoto S., Koutsaroff I.P., and Cervin-Lawry A., Funakubo H.	Orientation dependence of epitaxial and one-axis-oriented (Ba0.5Sr0.5)TiO3 films prepared by RF magnetron sputtering	Japanese Journal of Applied Physics 44 (9S), 6881	http://iopscience.iop.org/article/10.1143/JJAP.44.6881/pdf
h22	5	1998	Masaki Y., Koutzarov I.P., Ruda H.E., and Farrell M	Gold-particle-enhanced crystallite growth of thin films of barium titanate prepared by the sol-gel process	J. of the American Ceramic Society, 81: (4), 1074	http://onlinelibrary.wiley.com/doi/10.1111/j.1151-2916.1998.tb02454.x/abstract	2.780
h16 (partiail)	6	2006	A. Cervin-Lawry, M. Capanu, I. Koutsaroff, M. Zelner, and T. Bernacki	Low loss thin film capacitor and methods of manufacturing the same	US 20060274476	http://www.freepatentsonline.com/20060274476.pdf
h15	7	2013	H. Hirano, T. Kimura, I. P. Koutsaroff, M. Kadota, K. Hashimoto, M. Esashi and S. Tanaka	Integration of BST varactors with surface acoustic wave device by film transfer technology for tunable RF filters	Journal of Micromechanics and Microengineering (JMM) 23 025005	http://iopscience.iop.org/article/10.1088/0960-1317/23/2/025005
h14	8	2003	Koutsaroff I.P., Bernacki T., Zelner M., Cervin-Lawry A., Kassam A., Woo P., Woodward L., and Patel A.,	Microwave properties of Parallel Plate Capacitors based on (Ba,Sr)TiO3 thin films grown on SiO2/Al2O3 substrates	MRS Proceedings / Volume 784 / 2003 Volume 784 - Symposium C – Ferroelectric Thin Films XII Editors : H. Funakubo, S. Hoffmann-Eifert, V. Joshi, A.I. Kingon, I. Koutsaroff	http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8000697
h13	9	2004	Koutsaroff I.P., Bernacki T., Zelner M., Cervin-Lawry A., Jimbo T., and Suu K.	Characterization of Thin Film Decoupling and High-Frequency (Ba,Sr)TiO3 Capacitors on Al2O3 Ceramic Substrates	Japanese Journal of Applied Physics 43 (9B), 6740	http://iopscience.iop.org/article/10.1143/JJAP.43.6740/pdf
h12	10	2009	Ito, S., T. Yamada, K. Takahashi, S. Okamoto, T. Kamo, H. Funakubo, I. Koutsaroff, M. Zelner, and A. Cervin-Lawry	Effect of bottom electrode on dielectric property of sputtered-(Ba,Sr)TiO3 films	Journal of Applied Physics 105 061606	http://dx.doi.org/10.1063/1.3058998	2.183